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X-Ray Microscopy II

X-Ray Microscopy II

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2013
nidottu
This volume is based on papers presented at the International Symposium on X-Ray Microscopy held at Brookhaven National Laboratory, Upton NY, August 31-September 4, 1987. Previous recent symposia on the sub­ ject were held in New York in 1979, Gottingen in 1983 and Taipei in 1986. Developments in x-ray microscopy continue at a rapid pace, with im­ portant advances in all major areas: x-ray sources, optics and components, and microscopes and imaging systems. Taken as a whole, the work pre­ sented here emphasizes three major directions: (a) improvements in the capability and image-quality of x-ray microscopy, expressed principally in systems attached to large, high-brightness x-ray sources; (b) greater access to x-ray microscopy, expressed chiefly in systems employing small, often pulsed, x-ray sources; and (c) increased rate of exploration of applications of x-ray microscopy. The number of papers presented at the symposium has roughly dou­ bled compared with that of its predecessors. While we are delighted at this growth as a manifestation of vitality and rapid growth of the field, we did have to ask the authors to limit the length of their papers and to submit them in camera-ready form. We thank the authors for their con­ tributions and for their efforts in adhering to the guidelines on manuscript preparation.
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X-Ray Absorption Spectroscopy of Semiconductors

X-Ray Absorption Spectroscopy of Semiconductors

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2014
sidottu
X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
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X-ray and Neutron Techniques for Nanomaterials Characterization

X-ray and Neutron Techniques for Nanomaterials Characterization

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2016
sidottu
Fifth volume of a 40 volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about X-ray and Neutron Techniques for Nanomaterials Characterization. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
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Cosmic Ray Diffusion in the Galaxy and Diffuse Gamma Emission

Cosmic Ray Diffusion in the Galaxy and Diffuse Gamma Emission

Daniele Gaggero

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2016
nidottu
The original work presented in this thesis constitutes an important contribution to modern Cosmic Ray (CR) physics, and comes during one of the most exciting periods of this field. The first part introduces a new numerical code (DRAGON) to model the CR propagation in our Galaxy. The code is then used to perform a combined analysis of CR data, making it possible to determine their propagation properties with unprecedented accuracy. The second part is dedicated to a theoretical interpretation of the recent crucial experimental results on cosmic electron and positron spectra (PAMELA, Fermi-LAT experiments). Using the tools developed in the first part of the thesis, the author convincingly argues for the existence of a new spectral component, which could arise either from local astrophysical sources, such as pulsars, or from Dark Matter annihilation or decay. This thesis is a highly advanced work; the methods, analysis and results are clearly and carefully presented. This work is set to become an important reference document for any future work in this area.
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X-Ray Absorption Spectroscopy of Semiconductors

X-Ray Absorption Spectroscopy of Semiconductors

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2016
nidottu
X-ray Absorption Spectroscopy (XAS) is a powerful technique with which to probe the properties of matter, equally applicable to the solid, liquid and gas phases. Semiconductors are arguably our most technologically-relevant group of materials given they form the basis of the electronic and photonic devices that now so widely permeate almost every aspect of our society. The most effective utilisation of these materials today and tomorrow necessitates a detailed knowledge of their structural and vibrational properties. Through a series of comprehensive reviews, this book demonstrates the versatility of XAS for semiconductor materials analysis and presents important research activities in this ever growing field. A short introduction of the technique, aimed primarily at XAS newcomers, is followed by twenty independent chapters dedicated to distinct groups of materials. Topics span dopants in crystalline semiconductors and disorder in amorphous semiconductors to alloys and nanometric material as well as in-situ measurements of the effects of temperature and pressure. Summarizing research in their respective fields, the authors highlight important experimental findings and demonstrate the capabilities and applications of the XAS technique. This book provides a comprehensive review and valuable reference guide for both XAS newcomers and experts involved in semiconductor materials research.
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X-ray and Neutron Techniques for Nanomaterials Characterization

X-ray and Neutron Techniques for Nanomaterials Characterization

Springer-Verlag Berlin and Heidelberg GmbH Co. K
2018
nidottu
Fifth volume of a 40 volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about X-ray and Neutron Techniques for Nanomaterials Characterization. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.
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Man Ray

Man Ray

Katherine Ware

TASCHEN GMBH
2023
sidottu
Man Ray (1890–1976) was a polymath modernist, working in painting, sculpture, film, printmaking, and poetry. But it was his work in photography, with nude studies, fashion work, and portraiture that saw him pioneering a new chapter in the history of camerawork and art. With a wide-ranging collection of both his famous and lesser-known works, this monograph gives a vivid overview of Man Ray’s multifaceted practice and photographic legacy. It traces Ray from his artistic beginnings in New York through to his central role in the Parisian avant-garde, where he featured in the first Surrealist exhibition with Jean Arp, Max Ernst, André Masson, Joan Miró, and Pablo Picasso and produced such now iconic works as Noire et blanche and Le Violon d’Ingres. Through numerous examples of still life, portraiture, and beyond, we see how Ray constantly experimented with new techniques, pushing photography out of its documentary domain into ethereal, poetic expressions through multiple exposure, solarization, and the particular brand of photograms he wittily termed “rayography.”
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