David K. Ferry

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand­ ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.

A compendium of otherwise scattered information on the physics involved in the construction and operation of semiconductor devices at the submicron level. Addressed to people who make such devices, and assumes a solid understanding of solid state physics and electronics, and at least a familiarity w

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Fourth Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the fourth edition contains the latest developments, experiments, and device concepts. It contains completely new material on quantum computing and information processing, including qubit implementations and quantum sensing. Key features: - Full updated throughout with the latest research from the field - Presents a different view of quantum mechanics from an engineering perspective - Takes a modern view of the understanding of quantum mechanics as it affects real world technologies, including nanotechnology and quantum information processing.

Quantum Mechanics: An Introduction for Device Physicists and Electrical Engineers, Fourth Edition provides a complete course in quantum mechanics for students of semiconductor device physics and electrical engineering. It provides the necessary background to quantum theory for those starting work on micro- and nanoelectronic structures and is particularly useful for those beginning work with modern semiconductors devices, lasers and qubits. This book was developed from a course the author has taught for many years with a style and order of presentation of material specifically designed for this audience. It introduces the main concepts of quantum mechanics which are important in everyday solid-state physics and electronics. Each topic includes examples which have been carefully chosen to draw upon relevant experimental research. It also includes problems with solutions to test understanding of theory. Full updated throughout, the fourth edition contains the latest developments, experiments, and device concepts. It contains completely new material on quantum computing and information processing, including qubit implementations and quantum sensing. Key features: - Full updated throughout with the latest research from the field - Presents a different view of quantum mechanics from an engineering perspective - Takes a modern view of the understanding of quantum mechanics as it affects real world technologies, including nanotechnology and quantum information processing.

The Physics and Technology of Semiconductor Devices offers a comprehensive treatment of the physical principles underpinning today's semiconductor devices. Tracing the field from its origins and the evolution of Moore's Law, the book offers an integrated perspective on how device physics, materials science and design innovations have shaped and continue to shape the information age. Beginning with the evolution of the MOSFET and the foundations of band theory, the book leads readers into the physics of state-of-the-art transistors including finFETs, nanowire FETs and nanosheet devices, alongside high-frequency components and solar-energy technologies. Emphasis is placed on charge transport, band structure methods, scaling behaviour and the physical limits of device performance. Specialised device classes such as tunnel FETs, spin-based concepts, high-electron-mobility transistors and hot-carrier solar cells are introduced with discussion of their opportunities and constraints. Readers are guided through key themes including: Modern MOSFET architectures and their departure from classical planar devices Energy band theory in one, two and three dimensions, with real-space and momentum-space methods p-n junction physics, current flow and structural variants Scaling theory, velocity limits and ballistic considerations in advanced logic devices Microwave and high-frequency devices, including III-V material systems and realistic cutoff frequencies Photovoltaic device physics, efficiency limits, heterojunctions and emerging hot-carrier concepts Combining a theoretical understanding with practical device engineering, this book is ideal for graduate students, researchers and practising engineers, serving both as a high-level textbook and an authoritative reference.

This book provides a concise introduction to quantum information and quantum science. Topics such as quantum communications and quantum sensing enhance the discussion of quantum computing.

Semiconductors form the basis for the nano-electronics industry that powers everyday life. This book covers the electronic band structure, the lattice dynamics and the transport properties of semiconductors, and is an essential guide for first-year graduate level students.

This book describes Wigner functions and its applications in various fields of science where it has been found to be very useful in wide range of modern disciplines, including quantum information, coherent optics, and superconducting qubits.

Throughout their college career, most engineering students have done problems and studies that are basically situated in the classical world. Some may have taken quantum mechanics as their chosen field of study. This book moves beyond the basics to highlight the full quantum mechanical nature of the transport of carriers through nanoelectronic structures. The book is unique in that addresses quantum transport only in the materials that are of interest to microelectronics—semiconductors, with their variable densities and effective masses.The author develops Green’s functions starting from equilibrium Green’s functions and going through modern time-dependent approaches to non-equilibrium Green’s functions, introduces relativistic bands for graphene and topological insulators and discusses the quantum transport changes that these bands induce, and discusses applications such as weak localization and phase breaking processes, resonant tunneling diodes, single-electron tunneling, and entanglement. Furthermore, he also explains modern ensemble Monte Carlo approaches to simulation of various approaches to quantum transport and the hydrodynamic approaches to quantum transport. All in all, the book describes all approaches to quantum transport in semiconductors, thus becoming an essential textbook for advanced graduate students in electrical engineering or physics.