Harjinder Singh

Face to Face Stacking auf Wafer to Wafer (WoW) kann f r die Cu-Cu-Direktbonding-Verbindungen durchgef hrt werden. Durch Cu-Bonden kann eine gute mechanische Festigkeit erreicht werden, um die Scherkr fte w hrend des Ausd nnens aufrechtzuerhalten. Die Herstellung zuverl ssiger Verbindungsstrukturen ist jedoch eine st ndige Herausforderung. Spannungen resultieren aus der Ablagerung von Materialien, der Ungleichheit der thermischen Ausdehnung und der Elektromigration. Die Ablagerung von Materialien f hrt unweigerlich zu Spannungen. Die Materialien in den Verbindungsstrukturen, die als Leiter, Dielektrikum oder Barriere dienen, haben unterschiedliche W rmeausdehnungskoeffizienten. Die treibende Kraft ist die Spannung, die sich durch das Kornwachstum und den unterschiedlichen W rmeausdehnungskoeffizienten (CTE) von Cu-Leiterbahnen und Dielektrika aufbaut. Der Hohlraum wird dann geschaffen, um die entstehenden Spannungen abzubauen. Auch die Elektromigration, die durch die Stromspannung verursacht wird, schafft einen Hohlraum. In diesem Projekt besch ftigte ich mich mit der spannungsinduzierten Hohlraumbildung und der Elektromigration von Cu-Cu-Direktbonding-Proben bei einer Bondtemperatur von 300 C.

L'empilage face face sur Wafer to Wafer (WoW) peut tre r alis pour les interconnexions Cu-Cu liaison directe. Une bonne r sistance m canique pour soutenir la force de cisaillement pendant l'amincissement peut tre obtenue par la liaison Cu. La fabrication de structures d'interconnexion fiables est un d fi permanent. Les contraintes r sultent du d p t de mat riaux, du d calage de la dilatation thermique et de l' lectromigration. Le d p t de mat riaux g n re in vitablement des contraintes. Les mat riaux des structures d'interconnexion, s lectionn s pour fonctionner comme conducteurs, di lectriques ou barri res, ont des coefficients de dilatation thermique dissemblables. La force motrice provient de la contrainte accumul e en raison de la croissance des grains et du d calage de la dilatation thermique (CTE) entre l'interconnexion en cuivre et les di lectriques. L'espace vide est alors cr afin de lib rer la contrainte r sultante. De m me, le ph nom ne d' lectromigration caus par le stress du courant cr e un vide. Ainsi, dans ce projet, j'ai travaill sur le vide induit par la contrainte et l' lectromigration d'un chantillon de liaison directe Cu-Cu avec une temp rature de liaison de 300C.

L'impilamento faccia a faccia su Wafer to Wafer (WoW) pu essere effettuato per le interconnessioni a incollaggio diretto Cu-Cu. Una buona resistenza meccanica per sostenere la forza di taglio durante l'assottigliamento pu essere ottenuta con l'incollaggio Cu. La realizzazione di strutture di interconnessione affidabili una sfida persistente. Le sollecitazioni derivano dalla deposizione del materiale, dalla mancata corrispondenza dell'espansione termica e dall'elettromigrazione. Il deposito di materiale genera inevitabilmente sollecitazioni. I materiali delle strutture di interconnessione, scelti per funzionare come conduttori, dielettrici o barriere, hanno coefficienti di espansione termica diversi. La forza trainante deriva dalle sollecitazioni generate dalla crescita dei grani e dalla mancata corrispondenza dell'espansione termica (CTE) tra l'interconnessione Cu e i dielettrici. Lo spazio vuoto viene quindi creato per rilasciare lo stress risultante. Anche i fenomeni di elettromigrazione causati dalla tensione di corrente creano un vuoto. In questo progetto, quindi, ho lavorato sul vuoto indotto dalle sollecitazioni e sull'elettromigrazione di un campione di incollaggio diretto Cu-Cu con una temperatura di incollaggio di 300 C.

O empilhamento face a face em Wafer to Wafer (WoW) pode ser feito para as interliga es de liga o directa Cu-Cu. Uma boa resist ncia mec nica para sustentar a for a de corte durante o desbaste pode ser conseguida atrav s da colagem de Cu. Ao mesmo tempo que fazer estruturas de interliga o fi veis tem sido um desafio persistente. A tens o resulta da deposi o de material, da desadequa o da expans o t rmica e da electromigra o. A deposi o de material gera inevitavelmente tens o. Materiais em estruturas de interliga o, seleccionados para funcionar como condutores, diel ctricos, ou barreiras, t m coeficientes de expans o t rmica diferentes. A for a motriz vem do stress acumulado devido ao crescimento do gr o e ao desfasamento da expans o t rmica (CTE) entre Cu interconectados e diel ctricos. O espa o vazio ent o criado a fim de libertar a tens o resultante. Tamb m o fen meno de electromigra o causado pelo stress actual e cria um espa o vazio. Assim, neste projecto, trabalhei no Voiding Induzido de Stress e Electromigra o da amostra de liga o directa Cu-Cu com temperatura de liga o de 300C.

This book is dedicated to all Sikhs who laid down their lives for the freedom of others.The Game of Love tells the story of freedom struggles of Sikhs throughout history. In the fifteenth century, the first Sikh Guru, Guru Nanak started the revolution of standing up against tyranny and oppression. Sikhs have carried on this tradition to the present day.The Game of Love describes the tears, torture and sacrifices of Sikhs. The reader will decide if these warriors are termed freedom fighters, insurgents, militants, revolutionaries or Saints.

In 1984 the Indian Government attacked the holiest shrine of the Sikhs in Amritsar, commonly known as the Golden Temple (Harmander Sahib) on the pre-text of flushing out terrorists. 30 years later this attack on the faith & nationhood of the Sikhs still brings up painful memories of murder, terrorism and genocide. In light of newly disclosed documents by the British Government, many questions remain unanswered for the Sikh community about the events prior to and after Operation Blue Star (the Indian Army's attack on the Sikhs vatican in Amritsar). The aim of the book is to explore the events leading up to 1984 and to analyse the pursuit of truth, justice and liberty, for Sikhs in India and the diaspora. The book follows a narrative which is historical and topical, bringing current issues of Sikhs and Punjabi's into the discussion. There is also a focus on Sikhs in the diaspora and current Sikh agitations for justice.

Face to Face Stacking on Wafer to Wafer (WoW) can be done for the Cu-Cu direct bonding interconnects. A good mechanical strength to sustain shear force during thinning can be achieved by Cu bonding. While making reliable interconnect structures has been a persistent challenge. Stress results from material deposition, thermal expansion mismatch, and electromigration. Material deposition inevitably generates stress. Materials in interconnect structures, selected to function as conductors, dielectrics, or barriers, have dissimilar thermal expansion coefficients. The driving force comes from the stress built up due to grain growth and the thermal expansion mismatch (CTE) between Cu interconnect and dielectrics. The void space is then created in order to release the resulting stress. Also the electromigration phenomena caused due to current stressing and creates a void. So in this project, I worked on Stress Induced Voiding and Electromigration of Cu-Cu direct bonding sample with bonding temperature of 300C.

Sri Guru Arjan Dev Jee (1563 - 1605) was the fifth Sikh Guru and was pivotal in institutionalising the fledging faith. He constructed the most important Gurdwara for the Sikhs in Harmander Sahib, also commonly referred to as the Golden Temple of Amritsar. He authored many hymns and made the first collection of Sikh scripture in the Sri Aadh Granth Sahib. He was the first martyr of the Sikhs, he was tortured to death in the most inhumane manner, as he would not heed to the tyranny of the Mughal Empire. He was humble, poetic, peaceful and inspirational.

This book is a short biography of the tenth Guru of the Sikhs - Sri Guru Gobind Singh Jee (1666 - 1708 CE). The book gives an overview from birth to passing of the Guru, describing his inspirational teachings and mentioning geographical locations he visited.